Metal-oxide-semiconductor field-effect transistor/Definition: Difference between revisions
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<noinclude>{{Subpages}}</noinclude>A type of field-effect transistor with four electrical contacts and three layers: a metal top layer (connected to the gate contact), an insulating layer (usually an oxide layer) | <noinclude>{{Subpages}}</noinclude>A type of field-effect transistor with four electrical contacts and three layers: a metal top layer (connected to the gate contact), separated by an insulating layer (usually an oxide layer) from a semiconductor layer (connected to the body contact). The gate voltage switches "on" and "off" the electrical connection between a source and drain contact at the semiconductor surface. | ||
Latest revision as of 21:20, 10 April 2011
A type of field-effect transistor with four electrical contacts and three layers: a metal top layer (connected to the gate contact), separated by an insulating layer (usually an oxide layer) from a semiconductor layer (connected to the body contact). The gate voltage switches "on" and "off" the electrical connection between a source and drain contact at the semiconductor surface.