imported>John R. Brews |
imported>John R. Brews |
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| |MOSFET junction structure.PNG|A modern MOSFET | | |MOSFET junction structure.PNG|A modern MOSFET |
| |Silicon density of states.PNG|Calculated density of states for crystalline silicon. | | |Silicon density of states.PNG|Calculated density of states for crystalline silicon. |
| | |Seimiconductor band bending.PNG|Top panel: Applied voltage depletes holes from surface Bottom panel: Larger applied voltage further depletes holes but conduction band becomes low enough in energy to populate an inversion layer. |
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Revision as of 20:49, 6 January 2011
I am a Professor Emeritus of Electrical Engineering from The University of Arizona, where I taught device physics and circuit design for just under two decades. Previously, I was a research scientist for twenty-odd years at Bell Laboratories, Murray Hill, doing theoretical work in the areas of solid-state physics and device physics. I also am a Fellow of the IEEE, and a recipient of the Electron Device Society distinguished service award for work as Editor-in-chief of the journal IEEE Electron Device Letters, founded by Nobel prize winner George E. Smith. I've published a number of technical books and papers, some of which may be found at this link.
Images
Magnetism
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(CC) Image: John R. Brews
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B-field lines near uniformly magnetized sphere
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(CC) Image: John R. Brews
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Magnetic flux density vs. magnetic field in steel and iron
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Widlar current source
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(CC) Image: John R. Brews
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Widlar current source using bipolar transistors
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(CC) Image: John R. Brews
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Small-signal circuit for finding output resistance of the Widlar source
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(CC) Image: John R. Brews
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Design trade-off between output resistance and output current in Widlar source
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Forces
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(CC) Image: John R. Brews
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Force and its equivalent force and couple
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Electromagnetism
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(CC) Image: John R. Brews
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Devices
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(PD) Image: John R. Brews
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A modern MOSFET
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(CC) Image: John R. Brews
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Calculated density of states for crystalline silicon.
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(CC) Image: John R. Brews
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Top panel: Applied voltage depletes holes from surface Bottom panel: Larger applied voltage further depletes holes but conduction band becomes low enough in energy to populate an inversion layer.
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