imported>John R. Brews |
imported>John R. Brews |
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| |MOS Capacitor.PNG|Cross section of MOS capacitor showing charge layers | | |MOS Capacitor.PNG|Cross section of MOS capacitor showing charge layers |
| |MOS CV curves.PNG|Three types of MOS capacitance ''vs.'' voltage curves. ''HF'' <nowiki>=</nowiki> high frequency, ''LF'' <nowiki>=</nowiki> low frequency, ''V<sub>TH</sub>'' <nowiki>=</nowiki> threshold voltage and ''V<sub>FB</sub>'' <nowiki>=</nowiki> flatband voltage | | |MOS CV curves.PNG|Three types of MOS capacitance ''vs.'' voltage curves. ''V<sub>TH</sub>'' <nowiki>=</nowiki> threshold voltage and ''V<sub>FB</sub>'' <nowiki>=</nowiki> flatband voltage |
| |MOS equivqlent circuit.PNG|Small-signal equivalent circuit of the MOS capacitor in inversion with a single trap level | | |MOS equivqlent circuit.PNG|Small-signal equivalent circuit of the MOS capacitor in inversion with a single trap level |
| |MOSFET junction structure.PNG|A modern MOSFET | | |MOSFET junction structure.PNG|A modern MOSFET |
Revision as of 08:05, 22 January 2011
I am a Professor Emeritus of Electrical Engineering from The University of Arizona, where I taught device physics and circuit design for just under two decades. Previously, I was a research scientist for twenty-odd years at Bell Laboratories, Murray Hill, doing theoretical work in the areas of solid-state physics and device physics. I also am a Fellow of the IEEE, and a recipient of the Electron Device Society distinguished service award for work as Editor-in-chief of the journal IEEE Electron Device Letters, founded by Nobel prize winner George E. Smith. I've published a number of technical books and papers, some of which may be found at this link.
Images
| Magnetism
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(CC) Image: John R. Brews
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B-field lines near uniformly magnetized sphere
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(CC) Image: John R. Brews
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Magnetic flux density vs. magnetic field in steel and iron
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| Widlar current source
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(CC) Image: John R. Brews
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Widlar current source using bipolar transistors
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(CC) Image: John R. Brews
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Small-signal circuit for finding output resistance of the Widlar source
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(CC) Image: John R. Brews
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Design trade-off between output resistance and output current in Widlar source
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| Forces
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(CC) Image: John R. Brews
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Force and its equivalent force and couple
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| Electromagnetism
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(CC) Image: John R. Brews
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| Devices
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(PD) Image: John R. Brews
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Cross section of MOS capacitor showing charge layers
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(PD) Image: John R. Brews
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Three types of MOS capacitance vs. voltage curves. VTH = threshold voltage and VFB = flatband voltage
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(PD) Image: John R. Brews
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Small-signal equivalent circuit of the MOS capacitor in inversion with a single trap level
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(PD) Image: John R. Brews
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A modern MOSFET
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(CC) Image: John R. Brews
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Calculated density of states for crystalline silicon.
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(CC) Image: John R. Brews
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Field effect: At a gate voltage above threshold a surface inversion layer of electrons forms at a semiconductor surface.
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(PD) Image: John R. Brews
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Occupancy comparison between n-type, intrinsic and p-type semiconductors.
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(PD) Image: John R. Brews
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Nonideal pn-diode current-voltage characteristics
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(PD) Image: John R. Brews
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Band-bending diagram for pn-junction diode at zero applied voltage
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(PD) Image: John R. Brews
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Band-bending for pn-diode in reverse bias
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(PD) Image: John R. Brews
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Quasi-Fermi levels in reverse-biased pn-junction diode
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(PD) Image: John R. Brews
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Band-bending diagram for pn-diode in forward bias
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(PD) Image: John R. Brews
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Fermi occupancy function vs. energy departure from Fermi level in volts for three temperatures
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(PD) Image: John R. Brews
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Fermi surface in k-space for a nearly filled band in the face-centered cubic lattice
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