imported>John R. Brews |
imported>John R. Brews |
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| |Seimiconductor band bending.PNG|''Field effect'': At a gate voltage above threshold a surface inversion layer of electrons forms at a semiconductor surface. | | |Seimiconductor band bending.PNG|''Field effect'': At a gate voltage above threshold a surface inversion layer of electrons forms at a semiconductor surface. |
| |Fermi levels.PNG|Occupancy comparison between n-type, intrinsic and p-type semiconductors. | | |Fermi levels.PNG|Occupancy comparison between n-type, intrinsic and p-type semiconductors. |
| | |Nonideal diode current-voltage behavior.PNG|Nonideal ''pn''-diode current-voltage characteristics |
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Revision as of 13:54, 9 January 2011
I am a Professor Emeritus of Electrical Engineering from The University of Arizona, where I taught device physics and circuit design for just under two decades. Previously, I was a research scientist for twenty-odd years at Bell Laboratories, Murray Hill, doing theoretical work in the areas of solid-state physics and device physics. I also am a Fellow of the IEEE, and a recipient of the Electron Device Society distinguished service award for work as Editor-in-chief of the journal IEEE Electron Device Letters, founded by Nobel prize winner George E. Smith. I've published a number of technical books and papers, some of which may be found at this link.
Images
Magnetism
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(CC) Image: John R. Brews
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B-field lines near uniformly magnetized sphere
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(CC) Image: John R. Brews
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Magnetic flux density vs. magnetic field in steel and iron
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Widlar current source
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(CC) Image: John R. Brews
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Widlar current source using bipolar transistors
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(CC) Image: John R. Brews
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Small-signal circuit for finding output resistance of the Widlar source
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(CC) Image: John R. Brews
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Design trade-off between output resistance and output current in Widlar source
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Forces
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(CC) Image: John R. Brews
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Force and its equivalent force and couple
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Electromagnetism
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(CC) Image: John R. Brews
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Devices
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(PD) Image: John R. Brews
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A modern MOSFET
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(CC) Image: John R. Brews
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Calculated density of states for crystalline silicon.
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(CC) Image: John R. Brews
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Field effect: At a gate voltage above threshold a surface inversion layer of electrons forms at a semiconductor surface.
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(PD) Image: John R. Brews
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Occupancy comparison between n-type, intrinsic and p-type semiconductors.
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(PD) Image: John R. Brews
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Nonideal pn-diode current-voltage characteristics
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